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Figure 2 from 1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy | Semantic Scholar
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GaN two-terminal devices, High-breakdown Schottky diodes - III-nitride semiconductors and their modern devices
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Study of a GaN Schottky diode based hydrogen sensor with a hydrogen peroxide oxidation approach and platinum catalytic metal - ScienceDirect
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I-V characteristics of GaN Schottky diode at different temperatures in... | Download Scientific Diagram
Different Isolation Processes for Free-Standing GaN p-n Power Diode with Ultra-High Current Injection
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Improved performance in vertical GaN Schottky diode assisted by AlGaN tunneling barrier: Applied Physics Letters: Vol 108, No 11
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MBE grown GaN/AlGaN lateral Schottky barrier diodes for high frequency applications: Journal of Vacuum Science & Technology B: Vol 34, No 2
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a), (b) Two vertical structures of Schottky diode fabricated on GaN... | Download Scientific Diagram
Electrical characterization of the Mg implanted GaN p-i-n diode. (a)... | Download Scientific Diagram
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