100-V Class Two-step-oxide Field-Plate Trench MOSFET to Achieve Optimum RESURF Effect and Ultralow On-resistance
US8697518B2 - Trench MOSFET with trench contact holes and method for fabricating the same - Google Patents
Trench-structure SiC-MOSFETs and Actual Products
Trench-structure SiC-MOSFETs and Actual Products
Trench MOSFET – Mohan's electronics blog
The Trench Power MOSFET: Part I—History, Technology, and Prospects
![DMOSFET (a) and Trench Gate MOSFET (b) with RDS components (from [10]). | Download Scientific Diagram](https://www.researchgate.net/profile/Gianluca-Sena/publication/318569763/figure/fig1/AS:669414940737544@1536612367245/DMOSFET-a-and-Trench-Gate-MOSFET-b-with-RDS-components-from-10.jpg "DMOSFET (a) and Trench Gate MOSFET (b) with RDS components (from [10]). | Download Scientific Diagram")
DMOSFET (a) and Trench Gate MOSFET (b) with RDS components (from [10]). | Download Scientific Diagram
Split Gate Technology MOSFETs - MCC | Mouser
The Trench Power MOSFET: Part I—History, Technology, and Prospects
4H-SiC trench MOSFET with an integrated Schottky barrier diode and L-shaped P<sup>+</sup> shielding region-中国光学期刊网
Trench MOSFET construction | Trench MOSFET basics
1.2 kV SiC Trench MOSFETs for All-SiC Modules | Fuji Electric Global
Module 28 Trench MOSFETs - YouTube
Mitsubishi Electric develops trench-type SiC MOSFET with electric-field-limiting structure
Designing 4H-SiC P-shielding trench gate MOSFET to optimize on-off electrical characteristics - ScienceDirect
Preparation of Papers in Two-Column Format for the Proceedings of the 2004 Sarnoff Symposium
Structural optimization and miniaturization for Split-Gate Trench MOSFETs with 60 V breakdown voltage - ScienceDirect
A novel 4H-SiC trench MOSFET with double shielding structures and ultralow gate-drain charge
Silicon Carbide - CoolSiC Trench MOSFET Combining SiC Performance with Silicon Ruggedness
Structural optimization and miniaturization for Split-Gate Trench MOSFETs with 60 V breakdown voltage - ScienceDirect
Trench MOSFET fabrication flow | Vacuum Magazine
150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers
